Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing
نویسندگان
چکیده
منابع مشابه
Improved Thermal Stability of NiSi Nanolayer in Ni-Si Co-sputtered Structure
Electrical, structural and morphological properties of Ni silicide films formed in Ni(Pt 4at.% )/Si(100) and Ni0.6Si0.4(Pt4at.% )/Si(100) structures at various annealing temperatures ranging from 200 to 1000 oC were studied. The Ni(Pt) and Ni0.6Si0.4(Pt) films with thickness of 15 and 25 nm were deposited by RF magnetron co-sputtering method, respectively. The annealing process of the structur...
متن کاملStructural Characterization of Amorphous Silicon
The structure of amorphous silicon in its pure and hydrogenated form has attracted wide interest over the last five decades. This substantial interest is twofold. Firstly, amorphous silicon is a technologically highly significant material with many applications such as photovoltaic cells or thin-film transistors. Secondly, physically it is a fundamentally interesting material which has been reg...
متن کاملCluster-induced crystallization of nano-silicon particles
The possibility of producing from 20 nm to 100 nm sized silicon powders by plasma-induced reactions of silane including the formation of high-mass hydrogenated silicon anion clusters has been recently demonstrated. Careful HREM imaging showed circular contrast features, 1.5 to 2.5 nm in size, embedded in the amorphous particles which was attributed to the presence of medium range order in these...
متن کاملMedium range structural order in amorphous tantala spatially resolved with changes to atomic structure by thermal annealing
Article history: Received 1 October 2015 Received in revised form 29 January 2016 Accepted 8 February 2016 Available online xxxx Amorphous tantala (a-Ta2O5) is an important technological material that has wide ranging applications in electronics, optics and the biomedical industry. It is used as the high refractive index layers in themulti-layer dielectric mirror coatings in the latest generati...
متن کاملReflection mode XAFS investigations of reactively sputtered thin films.
Amorphous Ta-oxide and Sn-nitride thin films were prepared by reactive sputter deposition on smooth float glass substrates and investigated ex situ using reflection mode XAFS. The absorption coefficient mu and its fine structure were extracted from the measured reflection mode XAFS spectra with a method based on the Kramers-Kronig transform. Bond distances, coordination numbers and Debye-Waller...
متن کامل